Explore NSN 5962-01-241-3168 Parts Catalog - (ZA0794J, V510-00018-1, V510 00018 1) under Microcircuit Memory
NSN 5962-01-241-3168 is a Microcircuit Memory part manufactured by Texas Instruments Incorporated, Raytheon Company, Boeing Company The, Advanced Micro Devices Inc. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5962-01-241-3168 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than ZA0794J, V510-00018-1, V510 00018 1, AM9114BDMB? Related NSN parts defined by FSC 5962 Microcircuits Electronic are listed below.
NSN 5962-01-241-3168 Information
| Alternative NSN: 5962-01-241-3168 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012413168 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Boeing Company The , Raytheon Company , Texas Instruments Incorporated |
5962-01-241-3168 (5962012413168) - Microcircuit Memory Part Details
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ZA0794J | texas instruments incorporated | microcircuit memory | Avl | RFQ |
| V510-00018-1 | raytheon company | microcircuit memory | Avl | RFQ |
| V510 00018 1 | boeing company the | microcircuit memory | Avl | RFQ |
| AM9114BDMB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012413168
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
Browse Similar National Stock Number for NSN 5962-01-241-3168, 5962012413168
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