Explore NSN 5962-01-226-3025 Parts Catalog - (585R727H02, 585R727H02, 585R727H02) under Microcircuit Memory
NSN 5962-01-226-3025 is a Microcircuit Memory part manufactured by Sgs Thomson Microelectronics Inc, Integrated Device Technology Inc, Fujitsu Microelectronics Inc. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5962-01-226-3025 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than 585R727H02? Related NSN parts defined by FSC 5962 Microcircuits Electronic are listed below.
NSN 5962-01-226-3025 Information
| Alternative NSN: 5962-01-226-3025 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012263025 |
| NCB Code: USA (01) |
| Manufacturers: Fujitsu Microelectronics Inc , Integrated Device Technology Inc , Sgs Thomson Microelectronics Inc |
5962-01-226-3025 (5962012263025) - Microcircuit Memory Part Details
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 585R727H02 | sgs thomson microelectronics inc | microcircuit memory | Avl | RFQ |
| 585R727H02 | integrated device technology inc | microcircuit memory | Avl | RFQ |
| 585R727H02 | fujitsu microelectronics inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012263025
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM SUPPLY |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
Browse Similar National Stock Number for NSN 5962-01-226-3025, 5962012263025
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