Explore NSN 5962-01-202-8612 Parts Catalog - (29671MW, 82008F1JB, 82008) under Microcircuit Memory
NSN 5962-01-202-8612 is a Microcircuit Memory part manufactured by Fairchild Semiconductor Corporation, Dla Land And Maritime. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5962-01-202-8612 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than 29671MW, 82008F1JB, 82008, 5962-82008F1BJX, 5962 82008F1BJB? Related NSN parts defined by FSC 5962 Microcircuits Electronic are listed below.
NSN 5962-01-202-8612 Information
| Alternative NSN: 5962-01-202-8612 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012028612 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Fairchild Semiconductor Corporation |
5962-01-202-8612 (5962012028612) - Microcircuit Memory Part Details
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 29671MW | fairchild semiconductor corporation | microcircuit memory | Avl | RFQ |
| 82008F1JB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82008 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-82008F1BJX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962 82008F1BJB | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012028612
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 04 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND BURN IN AND HERMETICALLY SEALED AND MONOLITHIC AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND RELIABILITY SCREENING REQUIRED AND STATIC OPERATION AND WBUFFERED OUTPUT AND WENABLE AND WINDEPENDENT OUTPUTS AND |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY32768 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
Browse Similar National Stock Number for NSN 5962-01-202-8612, 5962012028612
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