Explore NSN 5962-01-117-7026 Parts Catalog - (2102AJ R, MM2102AJ-4 883, AM9102BDM) under Microcircuit Memory

NSN 5962-01-117-7026 is a Microcircuit Memory part manufactured by Rochester Electronics Llc, National Semiconductor Corp, Msis Semiconductor Inc, Intersil Corporation, Intel Corporation. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5962-01-117-7026 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than 2102AJ R, MM2102AJ-4 883, AM9102BDM, IM7552SEL, MC2102A-4? Related NSN parts defined by FSC 5962 Microcircuits Electronic are listed below.

NSN 5962-01-117-7026 Information

Alternative NSN: 5962-01-117-7026
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 011177026
NCB Code: USA (01)
Manufacturers: Advanced Micro Devices Inc , Intel Corporation , Intersil Corporation , Msis Semiconductor Inc , National Semiconductor Corp , Rochester Electronics Llc

5962-01-117-7026 (5962011177026) - Microcircuit Memory Part Details

Part No Manufacturer Item Name QTY RFQ
2102AJ R rochester electronics llc microcircuit memory Avl RFQ
MM2102AJ-4 883 national semiconductor corp microcircuit memory Avl RFQ
AM9102BDM msis semiconductor inc microcircuit memory Avl RFQ
IM7552SEL intersil corporation microcircuit memory Avl RFQ
MC2102A-4 intel corporation microcircuit memory Avl RFQ
D8102A-4 intel corporation microcircuit memory Avl RFQ
MD8102A-4 B intel corporation microcircuit memory Avl RFQ
CM2102A-4 intel corporation microcircuit memory Avl RFQ
AM9102 BDM advanced micro devices inc microcircuit memory Avl RFQ
AM9102ADM advanced micro devices inc microcircuit memory Avl RFQ

Characteristics Data of NSN 5962011177026

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING260.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDMONOLITHIC AND W/ENABLE
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN1 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS MAXIMUM TOTAL SUPPLY
CZERMEMORY DEVICE TYPERAM
TESTTEST DATA DOCUMENT96906-MILSTD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

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