Explore NSN 5962-01-013-8770 Parts Catalog - (ICE007144, 264045260, HEF4526BP) under Microcircuit Memory

NSN 5962-01-013-8770 is a Microcircuit Memory part manufactured by Trend Networks Services, Schlumberger Industries Inc, Philips France, Philips Composants Sa Div, Freescale Semiconductor Inc. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5962-01-013-8770 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than ICE007144, 264045260, HEF4526BP, MC14526BCP, MC14526CP? Related NSN parts defined by FSC 5962 Microcircuits Electronic are listed below.

NSN 5962-01-013-8770 Information

Alternative NSN: 5962-01-013-8770
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 010138770
NCB Code: USA (01)
Manufacturers: Freescale Semiconductor Inc , Philips Composants Sa Div , Philips France , Schlumberger Industries Inc , Trend Networks Services

5962-01-013-8770 (5962010138770) - Microcircuit Memory Part Details

Part No Manufacturer Item Name QTY RFQ
ICE007144 trend networks services microcircuit memory Avl RFQ
264045260 schlumberger industries inc microcircuit memory Avl RFQ
HEF4526BP philips france microcircuit memory Avl RFQ
HEF4526BP philips composants sa div microcircuit memory Avl RFQ
MC14526BCP freescale semiconductor inc microcircuit memory Avl RFQ
MC14526CP freescale semiconductor inc microcircuit memory Avl RFQ

Characteristics Data of NSN 5962010138770

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 870 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 240 INCHES MINIMUM AND 0 260 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 180 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-40 085 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDLOW POWER AND WCLOCK AND WINHIBIT AND WPRESET
MEMORYCQSJINCLOSURE MATERIALPLASTIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN9 INPUT
MEMORYCRHLBIT QUANTITY4
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC18 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC1100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 1100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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