Explore NSN 5961-01-187-8685 Parts Catalog - (99182124, 99180615, 43 948-008) under Transistor

NSN 5961-01-187-8685 is a Transistor part manufactured by Thales Underwater Systems Ltd, Thales Sa, Rockwell Collins Deutschland, International Rectifier Corporation, Honeywell International Inc. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5961-01-187-8685 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than 99182124, 99180615, 43 948-008, 2N6849, IRFF9130? Related NSN parts defined by FSC 5961 Semiconductor Devices and Associated Hardware are listed below.

NSN 5961-01-187-8685 Information

Alternative NSN: 5961-01-187-8685
Item Name: Transistor
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 011878685
NCB Code: USA (01)
Manufacturers: Bae Systems Australia Ltd , Harris Corporation , Honeywell International Inc , International Rectifier Corporation , Rockwell Collins Deutschland , Thales Avionics Sas , Thales Sa , Thales Underwater Systems Ltd

5961-01-187-8685 (5961011878685) - Transistor Part Details

Part No Manufacturer Item Name QTY RFQ
99182124 thales underwater systems ltd transistor Avl RFQ
99180615 thales sa transistor Avl RFQ
43 948-008 rockwell collins deutschland transistor Avl RFQ
2N6849 international rectifier corporation transistor Avl RFQ
IRFF9130 international rectifier corporation transistor Avl RFQ
734-167-9001 honeywell international inc transistor Avl RFQ
2N6849 harris corporation transistor Avl RFQ
IRFF9130 bae systems australia ltd transistor Avl RFQ
A1233647 thales avionics sas transistor Avl RFQ

Characteristics Data of NSN 5961011878685

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.180 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.500 INCHES MINIMUM
ADAVOVERALL DIAMETER0.360 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODTERMINAL
AYQSTERMINAL CIRCLE DIAMETER0.020 INCHES NOMINAL
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC-100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC-6.50 AMPERES MAXIMUM DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD

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