Explore NSN 5961-01-162-4615 Parts Catalog - (V11563, 43 948-001, IRF231) under Transistor

NSN 5961-01-162-4615 is a Transistor part manufactured by Siliconix Incorporated, Rockwell Collins Deutschland, International Rectifier Corporation, Freescale Semiconductor Inc, Electronic Industries Inc. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5961-01-162-4615 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than V11563, 43 948-001, IRF231, IRF230, 2N6797? Related NSN parts defined by FSC 5961 Semiconductor Devices and Associated Hardware are listed below.

NSN 5961-01-162-4615 Information

Alternative NSN: 5961-01-162-4615
Item Name: Transistor
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 011624615
NCB Code: USA (01)
Manufacturers: Aai Corporation , Computer Sciences Corporation , Electronic Industries Inc , Freescale Semiconductor Inc , International Rectifier Corporation , Rockwell Collins Deutschland , Siliconix Incorporated

5961-01-162-4615 (5961011624615) - Transistor Part Details

Part No Manufacturer Item Name QTY RFQ
V11563 siliconix incorporated transistor Avl RFQ
43 948-001 rockwell collins deutschland transistor Avl RFQ
IRF231 international rectifier corporation transistor Avl RFQ
IRF230 international rectifier corporation transistor Avl RFQ
IRF230 freescale semiconductor inc transistor Avl RFQ
2N6797 electronic industries inc transistor Avl RFQ
IRF232 computer sciences corporation transistor Avl RFQ
58139-91047 aai corporation transistor Avl RFQ

Characteristics Data of NSN 5961011624615

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH1.573 INCHES NOMINAL
ABKWOVERALL HEIGHT0.450 INCHES MAXIMUM
ABMKOVERALL WIDTH1.050 INCHES MAXIMUM
AGAVIII END ITEM IDENTIFICATION6625-01-022-5859
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONFIELD EFFECT-DUAL GATE
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASEDRAIN
AXGYMOUNTING METHODUNTHREADED HOLE
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC9.00 AMPERES MAXIMUM DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE

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