Explore NSN 5961-01-053-2794 Parts Catalog - (P565039101, JAN1N5809, 28473-73011) under Semiconductor Device Diode

NSN 5961-01-053-2794 is a Semiconductor Device Diode part manufactured by F E L Corp, Bae Systems Operations Limited Dba Bae Systems Plc, Vishay Ltd, Thales Optronics Limited, Selex Es Limited. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5961-01-053-2794 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than P565039101, JAN1N5809, 28473-73011, UES1302, SE25870-048? Related NSN parts defined by FSC 5961 Semiconductor Devices and Associated Hardware are listed below.

NSN 5961-01-053-2794 Information

Alternative NSN: 5961-01-053-2794
Item Name: Semiconductor Device Diode
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 010532794
NCB Code: USA (01)
Manufacturers: Bae Systems Operations Limited Dba Bae Systems Plc , F E L Corp , Inspektorat Wsparcia Sil Zbrojnych , Paaesikunta Logistiikkaosasto , Qes Ltd , Raytheon Company , Selex Es Limited , Thales Optronics Limited , Vishay Ltd

5961-01-053-2794 (5961010532794) - Semiconductor Device Diode Part Details

Part No Manufacturer Item Name QTY RFQ
P565039101 f e l corp semiconductor device diode Avl RFQ
JAN1N5809 bae systems operations limited dba bae systems plc semiconductor device diode Avl RFQ
28473-73011 bae systems operations limited dba bae systems plc semiconductor device diode Avl RFQ
UES1302 vishay ltd semiconductor device diode Avl RFQ
SE25870-048 thales optronics limited semiconductor device diode Avl RFQ
SE25870-045 thales optronics limited semiconductor device diode Avl RFQ
28473-73011 selex es limited semiconductor device diode Avl RFQ
VA-70-0154-1 selex es limited semiconductor device diode Avl RFQ
4178600-882 raytheon company semiconductor device diode Avl RFQ
317124A qes ltd semiconductor device diode Avl RFQ
10133170 paaesikunta logistiikkaosasto semiconductor device diode Avl RFQ
5961PL1253570 inspektorat wsparcia sil zbrojnych semiconductor device diode Avl RFQ

Characteristics Data of NSN 5961010532794

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC125.00 AMPERES FORWARD CURRENT, AVERAGE PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
TESTTEST DATA DOCUMENT81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION

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