Explore NSN 5961-00-998-2859 Parts Catalog - (2N2201, 2N2201, 2N2201) under Transistor

NSN 5961-00-998-2859 is a Transistor part manufactured by Solid State Devices Inc, General Electric Company, Falkor Partners Llc, Rockwell Collins Inc, Navair And Navsea Managed. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5961-00-998-2859 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than 2N2201, 352-0428-001, 65A7A6-1? Related NSN parts defined by FSC 5961 Semiconductor Devices and Associated Hardware are listed below.

NSN 5961-00-998-2859 Information

Alternative NSN: 5961-00-998-2859
Item Name: Transistor
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 009982859
NCB Code: USA (00)
Manufacturers: Falkor Partners Llc , General Electric Company , Gilbert Engineering Company , Navair And Navsea Managed , Rockwell Collins Inc , Solid State Devices Inc

5961-00-998-2859 (5961009982859) - Transistor Part Details

Part No Manufacturer Item Name QTY RFQ
2N2201 solid state devices inc transistor Avl RFQ
2N2201 general electric company transistor Avl RFQ
2N2201 falkor partners llc transistor Avl RFQ
352-0428-001 rockwell collins inc transistor Avl RFQ
65A7A6-1 navair and navsea managed transistor Avl RFQ
2N2201 gilbert engineering company transistor Avl RFQ

Characteristics Data of NSN 5961009982859

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.330 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.430 INCHES MINIMUM
ADAVOVERALL DIAMETER0.375 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASECOLLECTOR
AXGYMOUNTING METHODTERMINAL AND UNTHREADED HOLE
AYQSTERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
CBBLFEATURES PROVIDEDMOUNTING HARDWARE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CTRDPOWER RATING PER CHARACTERISTIC15.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
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