Explore NSN 5961-00-853-1065 Parts Catalog - (JHP111-130, 02-012-111, Z4XL18B) under Semiconductor Device Diode
NSN 5961-00-853-1065 is a Semiconductor Device Diode part manufactured by Hollingsworth John R Co, Motorola Inc, General Electric Company, Electronic Industries Inc, Raytheon Company. These items are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete NSN parts in our searchable NSN database, you can find your required NSN 5961-00-853-1065 parts with ease. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs. Do you require NSN part numbers other than JHP111-130, 02-012-111, Z4XL18B, 1N3026B, 4178600-114? Related NSN parts defined by FSC 5961 Semiconductor Devices and Associated Hardware are listed below.
NSN 5961-00-853-1065 Information
Alternative NSN: 5961-00-853-1065 |
Item Name: Semiconductor Device Diode |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 008531065 |
NCB Code: USA (00) |
Manufacturers: Adelco Elektronik Gmbh , American Telephone And Telegraph Co , Cpt Corporation , Dare Electronics Inc , E C A Etablissement Central , Electronic Industries Inc , Elettronica Gmbh , Fluke Corporation , Freescale Semiconductor Inc , General Dynamics Corporation , General Electric Company , Hollingsworth John R Co , Honeywell Intl Inc , Inspektorat Wsparcia Sil Zbrojnych , International Rectifier Corporation , Micro Uspd Inc , Motorola Inc , Qes Ltd , Raytheon Company , Raytheon Systems Ltd , Rockwell Collins Inc , Thales Usa Inc |
5961-00-853-1065 (5961008531065) - Semiconductor Device Diode Part Details
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
JHP111-130 | hollingsworth john r co | semiconductor device diode | Avl | RFQ |
02-012-111 | motorola inc | semiconductor device diode | Avl | RFQ |
Z4XL18B | general electric company | semiconductor device diode | Avl | RFQ |
1N3026B | electronic industries inc | semiconductor device diode | Avl | RFQ |
4178600-114 | raytheon company | semiconductor device diode | Avl | RFQ |
5961008531065 | e c a etablissement central | semiconductor device diode | Avl | RFQ |
231051042 | dare electronics inc | semiconductor device diode | Avl | RFQ |
359-0030 | cpt corporation | semiconductor device diode | Avl | RFQ |
KS19923L19 | american telephone and telegraph co | semiconductor device diode | Avl | RFQ |
JAN1N3026BA | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
ZB18B | micro uspd inc | semiconductor device diode | Avl | RFQ |
69-4978 | international rectifier corporation | semiconductor device diode | Avl | RFQ |
5961PL0800977 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | Avl | RFQ |
1489691-0001 | honeywell intl inc | semiconductor device diode | Avl | RFQ |
1N3026B | motorola inc | semiconductor device diode | Avl | RFQ |
1M18Z5 | general dynamics corporation | semiconductor device diode | Avl | RFQ |
1M18Z5 | freescale semiconductor inc | semiconductor device diode | Avl | RFQ |
1N3026A | freescale semiconductor inc | semiconductor device diode | Avl | RFQ |
1N3026 | freescale semiconductor inc | semiconductor device diode | Avl | RFQ |
113365 | fluke corporation | semiconductor device diode | Avl | RFQ |
521-034-031 | elettronica gmbh | semiconductor device diode | Avl | RFQ |
357180A | qes ltd | semiconductor device diode | Avl | RFQ |
20-00903-025 | raytheon systems ltd | semiconductor device diode | Avl | RFQ |
353-3131-000 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
848142-0181 | thales usa inc | semiconductor device diode | Avl | RFQ |
Characteristics Data of NSN 5961008531065
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 14.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
Browse Similar National Stock Number for NSN 5961-00-853-1065, 5961008531065
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