Buy 1377512-3 Part of Bae Systems Information And Electronic Systems Integration Inc | NSN 5962-01-356-5304
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Part Number: 1377512-3
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Alternate P/N: 13775123
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Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
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NSN: 5962-01-356-5304 (5962013565304)
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NIIN: 013565304
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Item Name : Microcircuit Memory
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CAGE Code: 94117
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FSG: 59 Electrical and Electronic Equipment Components
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Country: USA
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NCB Code: 01
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INC Code: 41015
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Last Updated: 05-21-2025
Thank You for Choosing Buy Aviation Parts. We're pleased to inform you that 1377512-3 Part with NSN 5962013565304 is now available. Other details of 1377512-3 are as Microcircuit Memory, manufactured by Bae Systems Information And Electronic Systems Integration Inc. Fill out the RFQ Form for 1377512-3Part and Get Affordable Deal with Quick Delivery.
NSN Information for Part Number 1377512-3 with NSN 5962-01-356-5304, 5962013565304
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-356-5304 Item Description: Microcircuit Memory | 5962 | 013565304 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1377512-3 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-356-5304, 5962013565304
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING300 0 MILLIWATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC50 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYAND-OR INVERT GATE ARRAY |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 12 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM DELAY |
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1377512-3
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